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| 2SK2685 GaAs HEMT ADE-208-400 1st. Edition Application UHF low noise amplifier Features * Excellent low noise characteristics. Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz) * High associated gain. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz) * High voltage. VDS = 6 or more voltage. * Small package. (CMPAK-4) Outline CMPAK-4 2 3 4 1 1. Source 2. Gate 3. Source 4. Drain 2SK2685 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Gate to drain voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDSS VGSO VGDO ID Pch Tch Tstg Ratings 6 -6 -7 20 100 125 -55 to +125 Unit V V V mA mW C C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Electrical Characteristics (Ta = 25C) Item Gate to source leak current Gate to source cutoff voltage Drain current Forward transfer admittance Associated gain Associated gain Associated gain Associated gain Minimum noise figure Minimum noise figure Minimum noise figure Minimum noise figure Note: Marking is "ZT-". Symbol I GSS VGS(off) I DSS |yfs| Ga Ga Ga Ga Fmin Fmin Fmin Fmin Min -- -0.3 35 40 -- -- 16 -- -- -- -- -- Typ -- -- 50 60 17.0 15.2 21.4 19.7 0.83 1.08 0.52 0.74 Max -20 -2.0 70 -- -- -- -- -- -- -- 1.0 -- Unit A V mA mS dB dB dB dB dB dB dB dB Test conditions VGS = -6 V, VDS = 0 VDS = 3 V, ID = 100 A VDS = 3 V, VGS = 0 (Pulse Test) VDS = 3 V, ID = 10 mA, f = 1 kHz VDS = 3 V, ID = 10 mA, f = 2 GHz VDS = 3 V, ID = 3 mA, f = 2 GHz VDS = 3 V, ID = 10 mA, f = 900 MHz VDS = 3 V, ID = 3 mA, f = 900 MHz VDS = 3 V, ID = 10 mA, f = 2 GHz VDS = 3 V, ID = 3 mA, f = 2 GHz VDS = 3 V, ID = 10 mA, f = 900 MHz VDS = 3 V, ID = 3 mA, f = 900 MHz 2 2SK2685 Typical Output Characteristics Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (mW) 200 16 150 Drain Current ID (mA) 20 -0.4 -0.3 V -0.1 V V -0.5 V Pulse Test -0.6 V 12 100 8 -0.7 V 50 4 -0.8 V VGS = -0.9 V 0 50 100 150 200 Ambient Temperature Ta (C) 0 1 2 3 4 Drain to Source Voltage VDS (V) 5 Typical Transfer Characteristics Forward Transfer Admittance yfs (mS) 100 VDS = 3 V Pulse Test 100 Forward Transfer Admittance vs. Gate to Source Voltage VDS = 3 V Pulse Test 80 80 Drain Current ID (mA) 60 60 40 40 20 20 -2.0 -1.6 -1.2 -0.8 -0.4 Gate to Source Voltage VGS (V) 0 0 -2.0 -1.6 -1.2 -0.8 -0.4 Gate to Source Voltage VGS (V) 0 3 2SK2685 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (mS) 100 VDS = 3 V Pulse Test Associated Gain Ga (dB) 80 30 Associated Gain vs. Drain Current f = 900 MHz 20 1V 3V 60 3V VDS = 1 V f = 2 GHz 10 40 20 0 4 8 12 16 Drain Current ID (mA) 20 0 10 20 Drain Current ID (mA) 30 Minimum Noise Figure vs. Drain Current 3 Minimum Noise Figure Fmin (dB) 30 Associated Gain vs. Drain to Source Voltage Associated Gain Ga (dB) f = 900 MHz 20 2 GHz 2 1 f = 2 GHz V =1 VDS 3V 1V 3V 10 f = 900 MHz 0 10 20 Drain Current ID (mA) 30 0 ID = 10 mA 2 4 6 8 Drain to Source Voltage VDS (V) 10 4 2SK2685 Minimum Noise Figure vs. Drain to Source Voltage 3.0 Minimum Noise Figure Fmin (dB) ID = 10 mA Isolation S21 - S12 (dB) 40 50 Isolation vs. Drain Current 3V VDS = 1 V 2.0 30 20 1.0 2 GHz 10 f = 900 MHz f = 900 MHz 0 2 4 6 8 Drain to Source Voltage VDS (V) 10 0 10 20 Drain Current ID (mA) 30 Isolation vs. Drain Current 50 Isolation S21 - S12 (dB) 3V VDS = 1 V 30 40 20 10 f = 2 GHz 0 10 20 Drain Current ID (mA) 30 5 2SK2685 S11 Parameter vs. Frequency 0.6 0.4 3 0.2 4 5 10 0 0.2 0.4 0.6 0.8 1.0 1.5 2 3 45 10 S12 Parameter vs. Frequency 90 120 Scale : 0.02/div. 60 0.8 1 1.5 2 150 30 -10 180 0 -0.2 -5 -4 -3 -0.4 -0.6 -1.5 -2 -150 -30 -0.8 -1 Condition : ID = 10 mA, Zo = 50 200 to 2000 MHz (200 MHz step) (VDS = 1 V) (VDS = 3 V) -60 -90 Condition : ID = 10 mA, Zo = 50 200 to 2000 MHz (200 MHz step) (VDS = 1 V) (VDS = 3 V) -120 S21 Parameter vs. Frequency 90 120 Scale : 2/div. 60 0.4 150 S22 Parameter vs. Frequency 0.6 0.8 1 1.5 2 3 30 0.2 4 5 10 180 0 0 0.2 0.4 0.6 0.8 1.0 1.5 2 3 45 10 -10 -0.2 -150 -30 -0.4 -120 -60 -0.6 -90 Condition : ID = 10 mA, Zo = 50 200 to 2000 MHz (200 MHz step) (VDS = 1 V) (VDS = 3 V) -1.5 -2 -5 -4 -3 -0.8 -1 Condition : ID = 10 mA, Zo = 50 200 to 2000 MHz (200 MHz step) (VDS = 1 V) (VDS = 3 V) 6 2SK2685 S Parameter (VDS = 1 V, ID = 10 mA, ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.996 0.980 0.977 0.970 0.952 0.938 0.916 0.896 0.882 0.859 ANG. -4.8 -9.5 -15.0 -19.9 -24.4 -29.2 -34.0 -38.2 -42.9 -47.1 S21 MAG. 5.12 5.13 5.07 4.94 4.84 4.74 4.67 4.55 4.47 4.36 ANG. 175.8 169.9 165.4 161.6 156.5 152.7 147.7 144.1 140.0 135.8 S12 MAG. 0.00691 0.0143 0.0210 0.0276 0.0399 0.0404 0.0462 0.0523 0.0578 0.0630 ANG. 89.8 88.2 83.3 81.5 79.3 76.0 74.8 73.1 72.0 70.3 S22 MAG. 0.688 0.682 0.674 0.668 0.658 0.648 0.636 0.622 0.611 0.597 ANG. -3.2 -6.5 -10.6 -13.8 -17.2 -20.7 -23.7 -27.1 -29.9 -33.1 S Parameter (VDS = 3 V, ID = 10 mA, ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.998 0.988 0.978 0.968 0.953 0.937 0.917 0.900 0.883 0.858 ANG. -4.0 -9.2 -14.5 -19.4 -24.2 -28.7 -33.3 -37.5 -41.9 -46.1 S21 MAG. 5.13 5.14 5.08 4.95 4.85 4.75 4.68 4.57 4.49 4.37 ANG. 175.8 170.1 165.2 161.4 156.4 152.5 147.8 144.0 140.1 135.9 S12 MAG. 0.00581 0.0110 0.0163 0.0216 0.0363 0.0312 0.0358 0.0401 0.0442 0.0477 ANG. 89.8 85.5 83.3 82.0 79.2 76.5 75.3 73.2 72.8 71.4 S22 MAG. 0.802 0.796 0.790 0.783 0.774 0.764 0.753 0.742 0.731 0.718 ANG. -3.2 -6.5 -9.8 -13.3 -16.4 -19.4 -22.5 -25.4 -28.1 -31.1 7 Unit: mm 2.0 0.2 1.3 0.2 0.1 0.3 + 0.05 - 0.1 0.3 + 0.05 - 0.425 0.65 0.65 0.16- 0.06 2.1 0.3 + 0.1 1.25 0.1 0 - 0.1 0.2 0.9 0.1 0.65 0.6 1.25 0.2 0.425 0.1 0.3 + 0.05 - 0.1 0.4 + 0.05 - Hitachi Code JEDEC EIAJ Weight (reference value) CMPAK-4(T) -- Conforms 0.006 g Datasheet Title Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. 1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning. If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then consult a physician without delay. 2. Disposal of this product must be handled, separately from other general refuse, by a specialist processing contractor in the same way as dangerous items. 4 Datasheet Title Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 5 |
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